main site    description    materials    links		This site is devoted to Task 2 entitled: Development of design and fabrication methods for semiconductor devices on the silicon carbide substrates. which is a part of National Polish Silicon Carbide Program: "Silicon carbide and its applications in high frequency, high power and high temperature electronics" Task 2 consists of the following projects: Development of characterization methods for parameters of SiC substrates as well as SiC/other material interfaces and their application for investigations carried out in the PBZ program. Contact and packaging technology for SiC devices designed for high temperature, high power and high frequency applications. Ion implantation method for silicon carbide doping. Elaboration of the technology and fabrication processes of HFET transistors and Schottky diodes based on AIII-N/SiC heterostructures for microwave applications. Development of technology and design for p-i-n diode in SiC substrate. Unipolar devices and transistors structures for high temperature electronics needs.

Department of Semiconductor and Optoelectronics Devices