Elaboration of the technology and fabrication processes of HFET transistors and Schottky diodes based on AIII-N/SiC heterostructures for microwave applications.
Institution: Department of Microelectronics and Microsystems, Technical University of Wroclaw
Leader: prof. dr hab. Marek Tłaczała
Contribution to the project:
- technology of AIII-N/SiC heterostructures manufacturing by means of MOVPE method,
- technology and fabrication of HFET transistors and Schottky diodes on the base of AIII-N/SiC heterostructures.