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Elaboration of the technology and fabrication processes of HFET transistors and Schottky diodes based on AIII-N/SiC heterostructures for microwave applications.

Institution: Department of Microelectronics and Microsystems, Technical University of Wroclaw

Leader: prof. dr hab. Marek Tłaczała

Contribution to the project:
  • technology of AIII-N/SiC heterostructures manufacturing by means of MOVPE method,

  • technology and fabrication of HFET transistors and Schottky diodes on the base of AIII-N/SiC heterostructures.

Department of Semiconductor and Optoelectronics Devices