Development of technology and design for p-i-n diode in SiC substrate.
Institution: Department of Semiconductor and Optoelectronic Devices, Technical University of Lodz
Leader: prof. dr hab. Zbigniew Lisik
Contribution to the project:
- technology of high temperature processes in SiC,
- technology and design for p-i-n diode doped in thermal diffusion process,
- developing of postimpantation annealing method for p-i-n implanted diodes,
- characterization of manufactured bipolar diodes.