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Development of technology and design for p-i-n diode in SiC substrate.

Institution: Department of Semiconductor and Optoelectronic Devices, Technical University of Lodz

Leader: prof. dr hab. Zbigniew Lisik

Contribution to the project:
  • technology of high temperature processes in SiC,

  • technology and design for p-i-n diode doped in thermal diffusion process,

  • developing of postimpantation annealing method for p-i-n implanted diodes,

  • characterization of manufactured bipolar diodes.

Department of Semiconductor and Optoelectronics Devices